Wafer Thinning



Wafer Thinning
CMP 가능한 Substrate : Si, Glass ,Quartz, Sapphire , GaAs, MgO, Al2O3모든 기판
4”~6” Wafer Min <50um , TTV ( Total Thickness Variation) :  ±1um , Ra <10Å으로 작업 가능

 

Dicing /Sawing Process
가능 Material : Silicon, Glass ,Quartz, SOI, SOG , Sapphire , Metal , Ceramic etc
Tolerance : < < ±5 ㎛, Back Side Chipping < 30 ㎛

*CMP (Chemical Mechanical Planarization or Polishing)
    (1) Materials : Silicon, SiO2, Poly Silicon, Metal (Ni, Cu, Al, Au) etc.
    (2) Specification : Step Tolerance among Hetero-structures :  Min.<1000Å

*Micro-sanding
   (1) Materials : 4”~6” Glass, quartz, silicon
   (2) Specification : Min. 100 ㎛, side angle 75 ~ 80 o

*DFR Process
    (1) Materials : 50, 100㎛ thick DFR
    (2) Specification : Min. 100㎛ line width